Solution:The peak concentration in the lateral autodoping profile (i.e., unintended doping in an epitaxial layer from the buried-layer or substrate doping) depends primarily on:
(a) Temperature: Affects diffusion and vapour-phase transport of dopants.
(b) Surface concentration in the buried layer: Higher buried-layer doping leads to higher autodoping drive.
(d) Growth rate: During epitaxial growth, a slower growth rate gives dopants more time to diffuse/laterally redistribute, affecting the peak concentration.
Typically, "(c) Applied voltage" is not a usual factor in standard thermal/chemical epitaxy autodoping. Hence, the correct combination is (a), (b), (d).