NTA UGC NET/JRF Exam, December-2019 (Electronic Science)

Total Questions: 100

1. In a Bipolar Junction transistor, the collector current is:

Correct Answer: A.

2. In a semiconductor, the concentration of holes in valence band can be given as:

Correct Answer: A.

3. For a semiconductor with electrons and holes as carriers, the resistivity is given as:

Correct Answer: B.

4. The Bandgap energy of silicon depends on temperature (T) and can be described as:

Correct Answer: B.

5. The depletion layer width at thermal equilíbrium for one-sided abrupt p-n junction diode

Correct Answer: A.

6. The one-dimensional Poisson equation for the surface space charge region at the drain is:

Correct Answer: C.

7. The pull-up to pull-down ratio for n-MOS inverter driven by another n-MOS inverter is:

Correct Answer: B.

8. If Dₒ is the frequency factor, E is the activation energy, T is the temperature and K is Boltzmann constant, then the diffusivity determined over a range of diffusion temperature can be expressed as:

Correct Answer: A.

9. The process which offers the possibility of growing high-quality oxides at temperatures even lower than those achieved with the highpressure technique is:

Correct Answer: C. Anodic-plasma oxidation

10. During the crystal growth, if A is constant. Eₐ is the activation energy, T is the absolute temperature and k is Boltzmann's constant, then the concentration of point defects can be expressed as:

Correct Answer: B.