NTA UGC NET/JRF Exam, September-2022 (Electronic Science)

Total Questions: 100

1. In a MOSFET, the transconductance in linear region can be expressed as:

Correct Answer: C.

2. In a junction field effect transistor the depletion layer width at a distance x from the source is:

Correct Answer: A.

3. In a junction field effect transistor the depletion layer width at a distance x from the source is:

Correct Answer: B.

4. An abrupt p-n junction in thermal equilibrium is shown in Fig.

Correct Answer: B.

5. For a thermally grown silicon dioxide layer, in a MOSFET, the leakage current between the gate and channel is:

Correct Answer: B. Very small

6. If N is the doping level of substrate and V is the effective voltage across the junction in a MOSFET, then the depletion region width for the junction is given by:

Correct Answer: A.

7. For n-MOSFET fabrication the substrate required is:

Correct Answer: B. p-type substrate

8. The current voltage relationship for the MOS transistor in a saturation region is expressed as:

Correct Answer: A.

9. The z transform of e⁻ᵗ sampled at 10 Hz will be:

Correct Answer: С.

10. If b and n be the number of branches and number of nodes, respectively, and s be the number of separate parts, then the number of independent loop equations will be:

Correct Answer: B. b - n + s